Thick oxide MOS transistors for ionizing radiation dose measurement

Ionizing radiation effects on MOS devices and ICs

The interaction of radiation with matter is a very broad and complex topic. In this chapter we try to analyse the problem with the aim of explaining, at least qualitatively, the more important aspects which are essential for a physical comprehension of the degradation observed in MOS devices and circuits when they are irradiated. In section 1.1 we introduce the effects of the interaction of var...

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide- Semiconductor Transistors

Favourable characteristics of silicon dioxide (further referred to as oxide or SiO2) as an almost irreplaceable dielectric in MOS (Metal-Oxide-Semiconductor) components have contributed to a considerable extent to the great success of the technology of manufacturing integrated circuits during the last decades. However, it has been proved that instabilities of electric charge in the gate oxide a...

Human EPR Dosimetry at Low Accumulated Dose of Ionizing Radiation Human EPR Dosimetry at Low Accumulated Dose of Ionizing Radiation

A new method for tooth (enamel and dentine) and bone EPR dosimetry is proposed that enhances substantially the dosimetric sensitivity. The method is based on the nonstandard spectra registration mode (the second harmonic phase quadrature detection of absorption under rapid passage conditions). This method provides an apparent enhancement of the component ratio of radiation to a nonradiative bac...

Floating-gate Mos Synapse Transistors

A SimpIe Ionizing Radiation SpectrometerLDosimeter based on Radiation Sensing Field Effect Transistors (RadFETs)

The RadFETs discussed in this paper are based on our [2] dual dielectric design of SiN over SO, The RadFETs were fabricated at the Micrel Corp. in San Jose, CA. to specifications provided by the authors. Micrel was able to use their standard p-MOSFET process with the addition of a Low Pressure Chemical Vapor Deposition (LPCVD) SIN deposition after gate oxidation to fabricate the RadFETs. Micrel...